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PHOTODIODE
Si PIN photodiode
S3590-18/-19
Large area Si PIN photodiode for scintillation counting
Features Applications
l Suitable for coupling with blue scintillator (LSO, GSO, etc.) l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (=420 nm) l X-ray detection l S3590-19: bare chip type (without window)
s Absolute maximum ratings
Parameter Reverse voltage Power dissipation Operating temperature Storage temperature Symbol VR P Topr Tstg Value 100 100 -20 to +60 -20 to +80 Unit V mW C C
s Electrical and optical characteristics (Ta=25 C)
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Temperature coefficient of I, Cut-off frequency Terminal capacitance Noise equivalent power Symbol p S Isc ID TCID fc Ct NEP =p =420 nm (LSO) =480 nm (BGO) =540 nm (CsI) 100 lx VR=70 V VR=70 V, -3 dB RL=50 VR=70 V, f=1 MHz Condition Min. S3590-18 Typ. 320 to 1100 960 0.65 0.28 0.34 0.38 100 4 1.12 40 40 7.6 x 10-14 Max. 10 Min. S3590-19 Typ. 320 to 1100 960 0.58 0.33 0.37 0.4 86 4 1.12 40 40 7.6 x 10-14 Max. 10 Unit nm nm A/W A/W A/W A/W A nA times/C MHz pF W/Hz1/2
Si PIN photodiode
s Spectral response S3590-18
(Typ. Ta=25 C) 0.7 QE=100 % 0.6
0.7 QE=100 % 0.6 S3590-09
S3590-18/-19
S3590-19 (Bare chip type)
(Typ. Ta=25 C)
PHOTO SENSITIVITY (A/W)
0.5 0.4 0.3 S3590-18 0.2 0.1 0 200
PHOTO SENSITIVITY (A/W)
S3590-08
0.5 0.4 S3590-19 0.3 0.2 0.1 0 200
400
600
800
1000
400
600
800
1000
WAVELENGTH (nm)
KPINB0223EA
WAVELENGTH (nm)
KPINB0224EA
s Dark current vs. reverse voltage
(Typ. Ta=25 C) 100 nA
s Terminal capacitance vs. reverse voltage
(Typ. Ta=25 C) 1 nF
10 nA
TERMINAL CAPACITANCE
DARK CURRENT
100 pF
1 nA
100 pA 0.1
1
10
100
10 pF 0.1
1
10
100
REVERSE VOLTAGE (V)
KPINB0225EA
REVERSE VOLTAGE (V)
KPINB0226EA
s Dimensional outline (unit: mm)
14.5 -0.5 1.4 10.0
+0
0.7
PHOTOSENSITIVE SURFACE 0.45 LEAD
WHITE CERAMIC
1.25
5.0 0.2
10
1.78 0.2
ACTIVE AREA
12.7 - 0.5
10.0
+0
The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package.
KPINA0098EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KPIN1039E01 Aug. 2003 DN

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